Silicon Tuning Diode
Silicon Tuning Diode • High Q hyperabrupt tuning diode • Very low capacitance spread • Designed for low tuning voltage o...
Description
Silicon Tuning Diode High Q hyperabrupt tuning diode Very low capacitance spread Designed for low tuning voltage operation
for VCO's in mobile communications equipment
For low frequency control elements such as TCXOS and VCXOS
High capacitance ratio and good C-V linearity Pb-free (RoHS compliant) package
BBY65...
BBY65-02V
Type BBY65-02V
Package SC79
Configuration single
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage Forward current Operating temperature range Storage temperature
VR IF Top Tstg
LS(nH) Marking 0.6 F
Value 15 50
-55 ... 150 -55 ... 150
Unit V mA °C
1 2011-06-15
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Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Reverse current
VR = 10 V VR = 10 V, TA = 85 °C
IR - - 10
- - 100
AC Characteristics
Diode capacitance
VR = 0.3 V, f = 1 MHz VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4.7 V, f = 1 MHz
CT 28.2 29.5 30.8 - 20.25 - 9.8 - 4.45 2.6 2.7 2.8
Capacitance ratio VR = 0.3 V, VR = 4.7 V Capacitance ratio VR = 1 V, VR = 3 V Series resistance VR = 1 V, f = 470 MHz
CT0.3/ CT4.7 CT1/CT3
rS
10 10.9 - 4.55 - 0.6 0.9
Unit nA
pF
pF pF Ω
2 2011-06-15
CT
Diode capacitance CT = ƒ (VR) f = 1MHz
40
pf
30 25 20 15 10
5
00 1 2 3 V 5 VR
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3 2011-06-15
Package SC79
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4 2011-06-15
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Date Code marking for discrete packages with one digit (SCD80, SC79, SC751)...
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