BBY55

BBY55... Silicon Tuning Diodes
Excellent linearity
High Q hyperabrupt tuning diode
Low series resistance
Designed for low tuning voltage operation for VCO's in mobile communications equipment
Very low capacitance spread BBY55-02V BBY55-02W BBY55-03W 1 2 Type BBY55-02V BBY55-02W BBY55-03W Package SC79 SCD80 SOD323 Configuration single single single LS(nH) 0.6 0.6 1.8 Marking 7 77 7 white Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol VR IF Top Tstg Value 16 20 -55 ... 150 -55 ... 150 Unit V mA °C 1 Nov-14-2002 BBY55... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 15 V VR = 15 V, TA = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz VR = 10 V, f = 1 MHz Capacitance ratio VR = 2 V, VR = 10 V, f = 1 MHz Series resistance VR = 5 V, f = 470 MHz rS 0.15 0.4 CT2 /CT10 CT 17.5 14 11.6 10 5.5 2 18.6 15 12.6 11 6 2.5 19.6 16 13.6 12 6.5 3 pF Unit max. nA typ. IR 3 100
2 Nov-14-2002 BBY55... Diode capacitance CT =
(VR ) f = 1MHz Capacitance change C =
(TA) f = 1 MHz 4 % 1V 2V 30 pF 24 22 2 6V 10V ∆C CT 20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 V 1 0 -1 -2 -3
C=(C(TA)-C(25°C))/C(25°C) -30 -10 10 30 50 70 °C 14 -4 -50 110 VR TA Series resistance r S=
(V R) f = ...