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BBY31

SILICON PLANAR VARIABLE CAPACITANCE DIODE

Description

SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE ISSUE 4 – JANUARY 1998 PIN CONFIGURATION 1 BBY31 2 1 PARTMARKING DETAIL BBY31 – S1 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL P tot T j:T stg VALUE 330 -55 to +150 UNIT mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless...

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