Document
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D051
BB909A; BB909B VHF variable capacitance diodes
Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 May 03
Philips Semiconductors
Product specification
VHF variable capacitance diodes
FEATURES • Excellent linearity • Matched to 2.5% • Hermetically sealed leaded glass SOD68 (DO-34) package • C28: 2.9 pF; ratio: 13.5 • Low series resistance. APPLICATIONS • Electronic tuning in VHF television tuners, band B up to 460 MHz • VCO. DESCRIPTION The BB909A, BB909B are variable capacitance diodes, fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD68 (DO-34) packages. ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL IR rs Cd PARAMETER reverse current diode series resistance diode capacitance BB909A CONDITIONS VR = 28 V; see Fig.3 VR = 28 V; Tj = 85 °C; see Fig.3 f = 100 MHz; note 1 see Figs 2 and 4 VR = 1 V; f = 1 MHz VR = 3 V; f = 1 MHz VR = 28 V; f = 1 MHz BB909B VR = 1 V; f = 1 MHz VR = 3 V; f = 1 MHz VR = 28 V; f = 1 MHz C d ( 1V ) -------------------C d ( 28V ) ∆C d --------Cd Note 1. VR is the value at which Cd = 30 pF. capacitance ratio f = 1 MHz
handbook, halfpage k
BB909A; BB909B
a
MAM234
Cathode side indicated by a green band on a black body (BB909A and BB909B). Additional red band (BB909A only).
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Tstg Tj PARAMETER continuous reverse voltage continuous forward current storage temperature operating junction temperature − − −55 −55 MIN. MAX. 30 20 +150 +100 V mA °C °C UNIT
MIN. − − − 31 − 2.6 33.5 − 2.8 12
TYP. − − − − 23 − − 25 − −
MAX. 10 200 0.9 − − 3 − − 3.2 15
UNIT nA nA Ω pF pF pF pF pF pF
capacitance matching
VR = 1 to 28 V
−
−
2.5
%
1996 May 03
2
Philips Semiconductors
Product specification
VHF variable capacitance diodes
GRAPHICAL DATA
BB909A; BB909B
MBE873
handbook, full pagewidth
50
Cd (pF) 40
30
20
10
0 10 −1 f = 1 MHz; Tj = 25 °C.
1
10
VR (V)
10 2
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
10 3 handbook, halfpage
MLC816
10 3 handbook, halfpage
MLC815
IR (nA)
TC d (K−1)
102
10 4
10
0
50
T j ( C)
o
100
10 5 10 1
1
10
VR (V)
102
Tj = 0 to 85 °C.
Fig.4 Fig.3 Reverse current as a function of junction temperature; maximum values.
Temperature coefficient of diode capacitance as a function of reverse voltage; typical values.
1996 May 03
3
Philips Semiconductors
Product specification
VHF variable capacitance diodes
PACKAGE OUTLINE
BB909A; BB909B
(1)
(2)
0.55 max 1.6 max 25.4 min 3.04 max 25.4 min
MBC040
Dimensions in mm. (1) Cathode side indicated by a green band on a black body (BB909A and BB909B). (2) Additional red band (BB909A only).
Fig.5 SOD68 (DO-34).
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification.