BB809

DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D050 BB809 VHF variable capacitance diode Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 May 03 Philips Semiconductors Product specification VHF variable capacitance diode FEATURES High linearity Matched to 3% Hermetically sealed leaded glass SOD68 (DO-34) package C28: 4.7 pF; ratio: 9 Low series resistance. Cathode side indicated by a yellow band on a black body. k handbook, halfpage a BB809 MAM159 APPLICATIONS Electronic tuning in VHF television tuners, band A up to 160 MHz VCO. DESCRIPTION The BB809 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD68 (DO-34) package. ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL IR rs Cd PARAMETER reverse current diode series resistance diode capacitance capacitance ratio Fig.1 Simplified outline (SOD68; DO-34) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Tstg Tj PARAMETER continuous reverse voltage continuous forward current storage temperature operating junction temperature − − −55 −55 MIN. MAX. 30 20 +150 +100 V mA °C °C UNIT CONDITIONS VR = 28 V; see Fig.3 VR = 28 V; Tj = 85 °C; see Fig.3 f = 200 MHz; note 1 VR = 1 V; f = 1 MHz; see Figs 2 and 4 VR = 28 V; f = 1 MHz; see Figs 2 and 4 f = 1 MHz MIN. − − − 39 4 8 TYP. − − − − − − MAX. 10 200 0.6 46 5 10 ...