Silicon Variable Capacitance Diode
BB639C/BB659C...
Silicon Variable Capacitance Diode
For tuning of extended frequency band
in VHF TV / VTR tuners
Hi...
Description
BB639C/BB659C...
Silicon Variable Capacitance Diode
For tuning of extended frequency band
in VHF TV / VTR tuners
High capacitance ratio Low series inductance Low series resistance Excellent uniformity and matching due to
"in-line" matching assembly procedure
BB639C BB659C/-02V
1
2
Type BB639C BB659C BB659C-02V
Package SOD323 SCD80 SC79
Configuration single single single
LS (nH) 1.8 0.6 0.6
Marking yellow S HH H
Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit
Diode reverse voltage Peak reverse voltage ( R 5k ) Forward current Operating temperature range Storage temperature
VR VRM IF Top Tstg
30 35 20 -55 ... 150 -55 ... 150
V
mA °C
1
Nov-07-2002
BB639C/BB659C...
Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 °C AC Characteristics Diode capacitance
VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz CT
Unit max. nA
typ.
IR 10 200
pF 36.5 27 2.5 2.4 39 30.2 2.72 2.55 15.3 11.1 42 33.2 3.05 2.75 %
Capacitance ratio
VR = 1 V, VR = 28 V, f = 1 MHz
CT1 /CT28 CT2 /CT25
14.2 9.5
Capacitance ratio
VR = 2 V, VR = 25 V, f = 1 MHz
Capacitance matching1)
VR = 1V to 28V, f = 1 MHz, 7 diodes sequence,
CT/CT
rS
BB639C
VR = 1V to 28V , f = 1 MHz, 4 diodes sequence,
0.3 0.5 0.6
2.5 1 2 0.7
BB659C/-02V
VR = 1V to 28V, f = 1 MHz, 7 diodes sequence ,
BB659C/-02V Series res...
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