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BB501M

Hitachi
Part Number BB501M
Manufacturer Hitachi
Description Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Published Jun 3, 2005
Detailed Description BB501M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-700C (Z) 4th. Edition Nov. 1998 Features • Build in...
Datasheet PDF File BB501M PDF File

BB501M
BB501M

Overview
BB501M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-700C (Z) 4th.
Edition Nov.
1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space.
• High gain; PG = 21.
5 dB typ.
at f = 900 MHz • Low noise; NF = 1.
85 dB typ.
at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode.
Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1.
Source 2.
Gate1 3.
Gate2 4.
Drain Notes: 1.
Marking is “AS–”.
2.
BB501M is individual type number of HITACHI BBFET.
BB501M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain...


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