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BB419 Dataheets PDF



Part Number BB419
Manufacturers Siemens Group
Logo Siemens Group
Description Silicon Variable Capacitance Diode (For VHF tuned circuit applications)
Datasheet BB419 DatasheetBB419 Datasheet (PDF)

BB 419 Silicon Variable Capacitance Diode q BB 419 For VHF tuned circuit applications Type BB 419 Marking white 2 Ordering Code (tape and reel) Q62702-B499 Pin Configuration Package1) SOD-123 Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current, TA ≤ 60 ˚C Operating temperature range Storage temperature range Thermal Resistance Junction - ambient Rth JA ≤ Symbol VR VRM IF Top Tstg Values 28 30 20 – 55 … + 150 Unit V mA – 55 … + 125 ˚C 450 K/W 1) For det.

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BB 419 Silicon Variable Capacitance Diode q BB 419 For VHF tuned circuit applications Type BB 419 Marking white 2 Ordering Code (tape and reel) Q62702-B499 Pin Configuration Package1) SOD-123 Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current, TA ≤ 60 ˚C Operating temperature range Storage temperature range Thermal Resistance Junction - ambient Rth JA ≤ Symbol VR VRM IF Top Tstg Values 28 30 20 – 55 … + 150 Unit V mA – 55 … + 125 ˚C 450 K/W 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 07.94 BB 419 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Reverse current VR = 28 V VR = 28 V, TA = 60 ˚C Diode capacitance, f = 1 MHz VR = 3 V VR = 25 V Capacitance ratio f = 1 MHz, VR = 3 V, 25 V Capacitance matching VR = 3 V … 25 V Series resistance f = 100 MHz, CT = 12 pF Figure of merit f = 50 MHz, VR = 3 V f= 200 MHz, VR = 25 V Symbol min. IR – – CT 26 4.3 CT3 / CT25 ∆CT Values typ. – – – – – – 0.35 max. Unit nA 20 200 pF 32 6 6.5 3 0.5 – % Ω – 5 – – / CT rs Q – 280 600 – Diode capacitance CT = f (VR) Semiconductor Group 2 .


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