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BB404 Dataheets PDF



Part Number BB404
Manufacturers Hitachi
Logo Hitachi
Description Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Datasheet BB404 DatasheetBB404 Datasheet (PDF)

BB404M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-717A (Z) 2nd. Edition Dec. 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) • Wide supply voltage range; Applicable with 5V to 9V supply voltage. • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; M.

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BB404M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-717A (Z) 2nd. Edition Dec. 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) • Wide supply voltage range; Applicable with 5V to 9V supply voltage. • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4R(SOT-143 var.) Outline MPAK-4R 3 4 2 1 1. Source 2. Drain 3. Gate2 4. Gate1 Notes: 1. Marking is “DX–”. 2. BB404M is individual type number of HITACHI BBFET. BB404M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±10 –0 Å}10 25 150 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min 12 +10 ±10 — — 0.4 0.5 2.3 0.9 0.003 9 — 22 — 24 — — — Typ — — — — — 0.7 0.7 2.8 1.3 0.02 15 13 27 27 29 29 1.2 1.2 Max — — — +100 ±100 1.0 1.0 3.6 2.0 0.05 19 — 34 — 32 — 1.9 — Unit V V V nA nA V V pF pF pF mA mA mS mS dB dB dB dB Test Conditions I D = 200µA, VG1S = VG2S = 0 I G1 = +10 µA, VG2S = VDS = 0 I G2 = ±10µA, VG1S = VDS = 0 VG1S = +9V, V G2S = VDS = 0 VG2S = ±9V, VG1S = VDS = 0 VDS = 5V, VG2S = 4V, ID = 100µA VDS = 5V, VG1S = 5V, ID = 100µA VDS = 5V, VG1 = 5V VG2S =4V, RG = 180kΩ f = 1MHz VDS = 5V, VG1 = 5V VG2S = 4V, RG = 180kΩ VDS = 9V, VG1 = 9V VG2S =6V, RG = 470kΩ VDS = 5V, VG1 = 5V, VG2S =4V RG = 180kΩ, f = 1kHz VDS = 9V, VG1 = 9V, VG2S =6V RG = 470kΩ, f = 1kHz VDS = 5V, VG1 = 5V, VG2S =4V RG = 180kΩ, f = 200MHz VDS = 9V, VG1 = 9V, VG2S =6V RG = 470kΩ, f = 200MHz VDS = 5V, VG1 = 5V, VG2S =4V RG = 180kΩ, f = 200MHz VDS = 9V, VG1 = 9V, VG2S =6V RG = 470kΩ, f = 200MHz Drain to source breakdown voltage V(BR)DSS Gate1 to source breakdown voltage V(BR)G1SS Gate2 to source breakdown voltage V(BR)G2SS Gate1 to source cutoff current Gate2 to source cutoff current Gate1 to source cutoff voltage Gate2 to source cutoff voltage Input capacitance Output capacitance Reverse transfer capacitance Drain current I G1SS I G2SS VG1S(off) VG2S(off) c iss c oss c rss I D(op) 1 I D(op) 2 Forward transfer admittance |yfs|1 |yfs|2 Power gain PG1 PG2 Noise figure NF1 NF2 2 BB404M Main Characteristics Test Circuit for Operating Items (I D(op) , |yfs|, Ciss, Coss, Crss, NF, PG) VG1 RG Gate 1 VG2 Gate 2 Source A ID Drain Power Gain, Noise Figure Test Circuit VT 1000p VG2 1000p VT 1000p 47k Input (50Ω) 1000p 36p L1 1000p 47k BBFET L2 1000p 47k Output (50Ω) 10p max 1000p 1SV70 RG 180k (VD=5V) 470k (VD=9V) 1000p V D = V G1 Unit Resistance (Ω) Capacitance (F) RFC 1SV70 L1 :φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns L2 :φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns RFC :φ1mm Enameled Copper Wire,Inside dia 5mm, 2Turns . 3 BB404M Maximum Channel Power Dissipation Curve Pch (mW) 200 I D (mA) 25 Ω 39 33 0 0 kΩ k Ω 82 Typical Output Characteristics 27 0k V G2S = 6 V V G1 = VDS 20 150 Channel Power Dissipation 15 100 Drain Current 10 kΩ 0 7 4 Ω 0kΩ 6 5 k 0 68 0 kΩ 50 5 RG Ω 1M Ω = 1.5 M 0 50 100 150 Ta (°C) 200 0 Ambient Temperature 2 4 6 Drain to Source Voltage 8 10 V DS (V) Drain Current vs. Gate2 to Source Voltage 25 V DS = V G1 = 9 V I D (mA) 20 25 Drain Current vs. Gate1 Voltage 270 k Ω I D (mA) 20 V DS = 9 V R G = 390 k Ω 6V 15 5V 4V 3V 2V 5 V G2S = 1 V 0 2 4 6 8 Gate1 Voltage V G1 (V) 10 330 15 kΩ Drain Current Ω 390 k 560 k Ω 680 k Ω 820 k Ω 1M Ω = 1.5 M Ω 10 470 k Ω Drain Current 10 5 RG 0 1.2 2.4 3.8 Gate2 to Source Voltage 4.8 6.0 VG2S (V) 4 BB404M Drain Current vs. Gate1 Voltege 25 I D (mA) I D (mA) V DS = 9 V R G = 470 k Ω 25 V DS = 9 V R G = 560 k Ω Drain Current vs. Gate1 Voltege 20 20 15 Drain Current 10 Drain Current 6V 5V 4V 3V 2V 15 10 6V 5V 4V 3V 2V V G2S = 1 V 5 V G2S = 1 V 0 2 4 6 8 Gate1 Voltage VG1 (V) 10 5 0 2 4 6 8 Gate1 Voltage VG1 (V) 10 Forward Transfer Admittance |y fs | (mS) 30 Forward Transfer Admittance |y fs | (mS) Forward Transfer Admittance vs. Gate1 Voltage Forward Transfer Admittance vs. Gate1 Voltage 30 V DS = 9 V R G = 470 k Ω 24 f = 1 kHz 18 5V 4V 3V 2V 6V 6V V DS = 9 V R G = 390 k Ω 5V 4V 24 f = 1 kHz 2V 18 3V 12 12 6 V G2S = 1 V 0 2 4 6 8 Gate1 Voltage VG1 (V) 10 6 V G2S = 1 V 0 2 4 6 8 Gate1 Voltage VG1 (V) 10 5 BB404M Forward Transfer Admittance vs. Gate1 Voltage Forward Transfer Admittance |y fs | (mS) 30 V DS = 9 V R G = 560 k Ω f = 1 kHz 40 Power Gain vs. Gate Resistance 6V 5V 4V 35 Power Gain PG (dB) 30 25 20 15 V G2S = 1 V 10 0.1 V DS = 9 V V G1 = 9 V V G2S = 6 V f = 200 MHz 0.2 0.5 1 2 5 Gate Resistance R G (M Ω ) 10 24 18 3V 2V 12 6 0 2 4 6 8 Gate1 Voltage VG1 (V) 10 Noise Figure vs. Gate Resistance 4 Noise Figure NF (dB) V DS = 9 V V G1 = 9 V V G2S = 6 V f .


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