Document
BB404M
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
ADE-208-717A (Z) 2nd. Edition Dec. 1998 Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) • Wide supply voltage range; Applicable with 5V to 9V supply voltage. • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4R(SOT-143 var.)
Outline
MPAK-4R
3 4 2 1
1. Source 2. Drain 3. Gate2 4. Gate1
Notes: 1. Marking is “DX–”. 2. BB404M is individual type number of HITACHI BBFET.
BB404M
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±10 –0 Å}10 25 150 150 –55 to +150 Unit V V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 12 +10 ±10 — — 0.4 0.5 2.3 0.9 0.003 9 — 22 — 24 — — — Typ — — — — — 0.7 0.7 2.8 1.3 0.02 15 13 27 27 29 29 1.2 1.2 Max — — — +100 ±100 1.0 1.0 3.6 2.0 0.05 19 — 34 — 32 — 1.9 — Unit V V V nA nA V V pF pF pF mA mA mS mS dB dB dB dB Test Conditions I D = 200µA, VG1S = VG2S = 0 I G1 = +10 µA, VG2S = VDS = 0 I G2 = ±10µA, VG1S = VDS = 0 VG1S = +9V, V G2S = VDS = 0 VG2S = ±9V, VG1S = VDS = 0 VDS = 5V, VG2S = 4V, ID = 100µA VDS = 5V, VG1S = 5V, ID = 100µA VDS = 5V, VG1 = 5V VG2S =4V, RG = 180kΩ f = 1MHz VDS = 5V, VG1 = 5V VG2S = 4V, RG = 180kΩ VDS = 9V, VG1 = 9V VG2S =6V, RG = 470kΩ VDS = 5V, VG1 = 5V, VG2S =4V RG = 180kΩ, f = 1kHz VDS = 9V, VG1 = 9V, VG2S =6V RG = 470kΩ, f = 1kHz VDS = 5V, VG1 = 5V, VG2S =4V RG = 180kΩ, f = 200MHz VDS = 9V, VG1 = 9V, VG2S =6V RG = 470kΩ, f = 200MHz VDS = 5V, VG1 = 5V, VG2S =4V RG = 180kΩ, f = 200MHz VDS = 9V, VG1 = 9V, VG2S =6V RG = 470kΩ, f = 200MHz Drain to source breakdown voltage V(BR)DSS Gate1 to source breakdown voltage V(BR)G1SS Gate2 to source breakdown voltage V(BR)G2SS Gate1 to source cutoff current Gate2 to source cutoff current Gate1 to source cutoff voltage Gate2 to source cutoff voltage Input capacitance Output capacitance Reverse transfer capacitance Drain current I G1SS I G2SS VG1S(off) VG2S(off) c iss c oss c rss I D(op) 1 I D(op) 2 Forward transfer admittance |yfs|1 |yfs|2 Power gain PG1 PG2 Noise figure NF1 NF2
2
BB404M
Main Characteristics
Test Circuit for Operating Items (I D(op) , |yfs|, Ciss, Coss, Crss, NF, PG)
VG1
RG Gate 1
VG2 Gate 2
Source
A ID
Drain
Power Gain, Noise Figure Test Circuit
VT 1000p
VG2 1000p
VT 1000p
47k Input (50Ω) 1000p 36p L1
1000p
47k
BBFET L2 1000p
47k
Output (50Ω)
10p max 1000p 1SV70 RG 180k (VD=5V) 470k (VD=9V) 1000p V D = V G1 Unit Resistance (Ω) Capacitance (F) RFC 1SV70
L1 :φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns L2 :φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns RFC :φ1mm Enameled Copper Wire,Inside dia 5mm, 2Turns
.
3
BB404M
Maximum Channel Power Dissipation Curve Pch (mW) 200 I D (mA) 25
Ω 39 33 0 0 kΩ k Ω
82
Typical Output Characteristics
27 0k
V G2S = 6 V V G1 = VDS 20
150
Channel Power Dissipation
15
100
Drain Current
10
kΩ 0 7 4 Ω 0kΩ 6 5 k 0 68 0 kΩ
50
5
RG
Ω 1M Ω = 1.5 M
0
50
100
150 Ta (°C)
200
0
Ambient Temperature
2 4 6 Drain to Source Voltage
8 10 V DS (V)
Drain Current vs. Gate2 to Source Voltage 25 V DS = V G1 = 9 V I D (mA) 20 25
Drain Current vs. Gate1 Voltage
270 k
Ω
I D (mA) 20
V DS = 9 V R G = 390 k Ω 6V 15 5V 4V 3V 2V 5 V G2S = 1 V 0 2 4 6 8 Gate1 Voltage V G1 (V) 10
330
15
kΩ
Drain Current
Ω 390 k
560 k Ω 680 k Ω 820 k Ω 1M Ω = 1.5 M Ω
10
470 k Ω
Drain Current
10
5
RG
0
1.2 2.4 3.8 Gate2 to Source Voltage
4.8 6.0 VG2S (V)
4
BB404M
Drain Current vs. Gate1 Voltege 25 I D (mA) I D (mA) V DS = 9 V R G = 470 k Ω 25 V DS = 9 V R G = 560 k Ω Drain Current vs. Gate1 Voltege
20
20
15
Drain Current
10
Drain Current
6V 5V 4V 3V 2V
15
10
6V 5V 4V 3V 2V V G2S = 1 V
5 V G2S = 1 V 0 2 4 6 8 Gate1 Voltage VG1 (V) 10
5
0
2 4 6 8 Gate1 Voltage VG1 (V)
10
Forward Transfer Admittance |y fs | (mS)
30
Forward Transfer Admittance |y fs | (mS)
Forward Transfer Admittance vs. Gate1 Voltage
Forward Transfer Admittance vs. Gate1 Voltage 30 V DS = 9 V R G = 470 k Ω 24 f = 1 kHz 18 5V 4V 3V 2V 6V
6V V DS = 9 V R G = 390 k Ω 5V 4V 24 f = 1 kHz 2V 18
3V
12
12
6 V G2S = 1 V 0 2 4 6 8 Gate1 Voltage VG1 (V) 10
6 V G2S = 1 V 0 2 4 6 8 Gate1 Voltage VG1 (V) 10
5
BB404M
Forward Transfer Admittance vs. Gate1 Voltage Forward Transfer Admittance |y fs | (mS) 30 V DS = 9 V R G = 560 k Ω f = 1 kHz 40
Power Gain vs. Gate Resistance
6V 5V 4V
35 Power Gain PG (dB) 30 25 20 15 V G2S = 1 V 10 0.1 V DS = 9 V V G1 = 9 V V G2S = 6 V f = 200 MHz 0.2 0.5 1 2 5 Gate Resistance R G (M Ω ) 10
24
18
3V 2V
12
6
0
2 4 6 8 Gate1 Voltage VG1 (V)
10
Noise Figure vs. Gate Resistance 4 Noise Figure NF (dB) V DS = 9 V V G1 = 9 V V G2S = 6 V f .