BB305C

BB305C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-608C (Z) 4th. Edition May 1998 Features Build in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics. High gain; (PG = 28 dB typ. at f = 200 MHz) Wide supply voltage range; Applicable with 5 V to 9 V supply voltage. Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C = 200 pF, Rs = 0 conditions. Provide mini mold packages; CMPAK-4 (SOT-343mod) Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Note: 1. Marking is “EW–”. 2. BB305C is individual type number of HITACHI BBFET. BB305C Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 +10 –0 Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature +10 25 100 150 –55 to +150 V mA mW °C °C Unit V V 2 BB305C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Symbol Min V(BR)DSS V(BR)G1SS V(BR)G2SS 12 +10 ±10 — — 0.4 0.4 2.3 1.1 — 10 — 23 — 24 — — — Typ — — — — — — — 2.8 1.5 Max — — — +100 ±100 1.0 1.0 3.5 1.9 Unit V V V nA nA V V pF pF pF mA mA mS mS dB dB dB dB Test Conditions I D = 200µA, VG1S = VG2S = 0 I G1 = +10 µA, VG2S = VDS = 0 I G2 = ±10µA, VG1S = VDS = 0 VG1S = +9V, V G2S = VDS = 0 VG2S = ±9V, VG1S = VDS = 0 VDS = 5V, VG2S ...