BB200

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BB200 Low-voltage variable capacitance double diode Product specification 2001 Oct 12 Philips Semiconductors Product specification Low-voltage variable capacitance double diode FEATURES Very steep C/V curve C1: 70 pF; C4.5: 13.4 pF C1 to C5 ratio: min. 5 Low series resistance Small plastic SMD package. APPLICATIONS Electronic tuning in FM-radio Voltage Controlled Oscillators (VCO). DESCRIPTION The BB200 is a variable capacitance double diode with a common cathode, fabricated in silicon planar technology and encapsulated in the SOT23 small plastic SMD package. MARKING TYPE NUMBER BB200 MARKING CODE SBp 1 handbook, halfpage BB200 PINNING PIN 1 2 3 anode (a1) anode (a2) common cathode DESCRIPTION 3 3 2 1 2 MAM169 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode VR IF Tstg Tj continuous reverse voltage continuous forward current storage temperature range operating junction temperature − − −55 −55 18 50 +150 +85 V mA °C °C PARAMETER MIN. MAX. UNIT CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL Per diode IR rs Cd C d ( 1V ) ---------------C d ( 5V ) reverse current diode series resistance diode capacitance capacitance ratio VR = 10 V f = 100 MHz; VR = 1.5 V VR = 1 V; f = 1 MHz VR = 4.5 V; f = 1 MHz f = 1 MHz − − 65.8 12 5 − 0.43 70 13.4 − 50 0.6 74.2 14.8 − nA Ω pF pF PARAMETER CONDITIONS MI...