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BB152 Dataheets PDF



Part Number BB152
Manufacturers Philipss
Logo Philipss
Description VHF variable capacitance diode
Datasheet BB152 DatasheetBB152 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB152 VHF variable capacitance diode Product specification 1998 Sep 09 Philips Semiconductors Product specification VHF variable capacitance diode FEATURES • High linearity • Excellent matching to 2% DMA • Very small plastic SMD package • C28: 2.7 pF; ratio: 22 • Low series resistance. APPLICATIONS • Electronic tuning in VHF television tuners, band A up to 160 MHz • Voltage controlled oscillators (VCO). DESCRIPTION The BB152 is a planar techn.

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DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB152 VHF variable capacitance diode Product specification 1998 Sep 09 Philips Semiconductors Product specification VHF variable capacitance diode FEATURES • High linearity • Excellent matching to 2% DMA • Very small plastic SMD package • C28: 2.7 pF; ratio: 22 • Low series resistance. APPLICATIONS • Electronic tuning in VHF television tuners, band A up to 160 MHz • Voltage controlled oscillators (VCO). DESCRIPTION The BB152 is a planar technology variable capacitance diode, in a SOD323 package. The excellent matching performance is achieved by gliding matching and a direct matching assembly procedure. PINNING PIN 1 2 DESCRIPTION cathode anode handbook, 2 columns BB152 1 2 MAM392 Marking code: PB. Cathode side indicated by a bar. Fig.1 Simplified outline (SOD323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR VRM IF Tstg Tj PARAMETER continuous reverse voltage peak reverse voltage continuous forward current storage temperature operating junction temperature in series with a 10 kΩ resistor CONDITIONS − − − −55 −55 MIN. MAX. 32 35 20 +150 +125 V V mA °C °C UNIT ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL IR rs Cd PARAMETER reverse current diode series resistance diode capacitance capacitance ratio CONDITIONS VR = 30 V; see Fig.3 VR = 30 V; Tj = 85 °C; see Fig.3 f = 100 MHz; VR is the value at which Cd = 30 pF VR = 1 V; f = 1 MHz; see Figs 2 and 4 f = 1 MHz MIN. − − − 52 − TYP. − − 1 − − 1.31 MAX. 10 200 1.2 62 2.89 − UNIT nA nA Ω pF pF VR = 28 V; f = 1 MHz; see Figs 2 and 4 2.48 C d ( 1V ) ----------------C d ( 2V ) C d ( 1V ) -------------------C d ( 28V ) C d ( 25V ) -------------------C d ( 28V ) ∆C d --------Cd capacitance ratio f = 1 MHz 20.6 − − capacitance ratio f = 1 MHz − 1.05 − capacitance matching VR = 1 to 28 V; in a sequence of 15 diodes (gliding) − − 2 % 1998 Sep 09 2 Philips Semiconductors Product specification VHF variable capacitance diode GRAPHICAL DATA BB152 MBK439 handbook, Cd full pagewidth 80 (pF) 70 60 50 40 30 20 10 0 10 −1 f = 1 MHz; Tj = 25 °C. 1 10 VR (V) 10 2 Fig.2 Diode capacitance as a function of reverse voltage; typical values. 10 3 handbook, halfpage MLC816 10 3 handbook, halfpage MLC815 IR (nA) TC d (K−1) 102 10 4 10 0 50 T j ( C) o 100 10 5 10 1 1 10 VR (V) 102 Tj = 0 to 85 °C. Fig.4 Fig.3 Reverse current as a function of junction temperature; maximum values. Temperature coefficient of diode capacitance as a function of reverse voltage; typical values. 1998 Sep 09 3 Philips Semiconductors Product specification VHF variable capacitance diode PACKAGE OUTLINE Plastic surface mounted package; 2 leads BB152 SOD323 A A1 E bp DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max. + 0.05 − 0.05 bp 0.40 0.25 c D 0.25 0.10 Note 1. The marking bar indicates the cathode. OUTLINE VERSION SOD323 , .


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