AM variable capacitance diode
DISCRETE SEMICONDUCTORS
DATA SHEET
alfpage
M3D053
BB130 AM variable capacitance diode
Product specification Supersedes...
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
alfpage
M3D053
BB130 AM variable capacitance diode
Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 May 03
Philips Semiconductors
Product specification
AM variable capacitance diode
FEATURES Matched to 3% Leaded plastic package C28: 18 pF; ratio: 27. APPLICATIONS Electronic tuning in AM radio applications VCO. DESCRIPTION The BB130 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD69 (TO-92 variant) leaded plastic package.
handbook, halfpage
BB130
k
a
MAM222
Fig.1 Simplified outline (SOD69; TO-92 variant) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Tstg Tj PARAMETER continuous reverse voltage continuous forward current storage temperature operating junction temperature − − −55 −55 MIN. MAX. 30 50 +125 +85 V mA °C °C UNIT
ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL IR rs Cd PARAMETER reverse current diode series resistance diode capacitance capacitance ratio CONDITIONS VR = 30 V; see Fig.3 VR = 30 V; Tj = 85 °C; see Fig.3 f = 1 MHz; note 1 VR = 1 V; f = 1 MHz; see Figs 2 and 4 VR = 28 V; f = 1 MHz; see Figs 2 and 4 C d ( 1V ) -------------------C d ( 28V ) ∆C d --------Cd Notes 1. VR = 1 V. 2. For a set of 2 diodes. f = 1 MHz MIN. − − − 450 12 23 TYP. − − − − − − − MAX. UNIT 50 300 2 550 21 − nA nA Ω pF pF
capacitance matching
VR = 1 to 28 ...
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