BB101C

BB101C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-505 1st. Edition Features Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Outline CMPAK–4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain BB101C Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 +6 –0 ±6 25 100 150 –55 to +150 Unit V V V mA mW °C °C 2 BB101C Electrical Characteristics (Ta = 25°C) Item Drain to source break down voltage Gate 1 to source breakdown voltage Gate 2 to source breakdown voltage Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS Min 6 +6 ±6 — — 0.2 0.4 10 16 Typ — — — — — — — 15 22 Max — — — +100 ±100 0.8 1.0 20 — Unit V V V nA nA V V mA mS Test conditions I D = 200 µA VG1S = VG2S = 0 I G1 = +10 µA VG2S = VDS = 0 I G2 = +10 µA VG1S = VDS = 0 VG1S = +5 V VG2S = VDS = 0 VG2S = ±5 V VG1S = VDS = 0 VDS = 5 V, VG2S = 4 V I D = 100 µA VDS = 5 V, VG1S = 5 V I D = 100 µA VDS = 5 V, VG1 = 5 V VG2S = 4 V, RG = 220 kΩ VDS = 5 V, VG1 = 5 V VG2S = 4 V RG = 220 kΩ, f = 1 kHz VDS = 5 V, VG1 = 5 V VG2S = 4 V, RG = 220 kΩ f = 1 MHz VDS = 5 V, VG1 = 5 V VG2S = 4 V RG = 220 kΩ, f = 900 MHz Gate 1 to source cutoff current I G1SS Ga...