BAY80

BAY80 Vishay Telefunken Silicon Epitaxial Planar Diode Applications General purpose 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current Junction temperature Storage temperature range Test Conditions Type Symbol VRRM VR IFSM IFRM IF IFAV Tj Tstg Value 150 120 1 625 250 200 175 –65...+200 Unit V V A mA mA mA °C °C tp=1ms Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=4mm, TL=constant Symbol RthJA Value 350 Unit K/W Document Number 85553 Rev. 2, 01-Apr-99 www.vishay.de FaxBack +1-408-970-5600 1 (4) BAY80 Vishay Telefunken Electrical Characteristics Tj = 25_C Parameter Forward voltage g Test Conditions IF=0.1mA IF=10 mA IF=50 mA IF=100mA IF=150mA Reverse current VR=120V VR=120 V, Tj=150°C Breakdown voltage IR=100mA, tp/T=0.01, tp=0.3ms Diode capacitance VR=0, f=1MHz Differential forward resistance IF=10mA Reverse recovery time IF=IR=30mA, iR=3mA, RL=100W Type Symbol VF VF VF VF VF IR IR V(BR) CD rf trr Min 0.4 0.63 0.73 0.78 Typ Max 0.52 0.78 0.92 1 1.07 100 100 Unit V V V V V nA mA V pF 150 1.5 5 5 50 W ns Characteristics (Tj = 25_C unless otherwise specified) 1000 100 Scattering Limit 10 IF – Forward Current ( mA ) I R – Reverse Current ( mA ) 1000 Tj = 25°C 100 Scattering Limit 10 1 VR = VRRM 0.1 0.01 0 40 80 120 1 0.1 160 200 94 9085 0 0.4 0.8 1.2 1.6 2.0 94 9084 Tj – J...