BAY80

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAY80 General purpose diode Product specification Supersedes data of April 1996 1996 Sep 18 Philips Semiconductors Product specification General purpose diode FEATURES Hermetically sealed leaded glass SOD27 (DO-35) package High switching speed: max. 50 ns General application Continuous reverse voltage: max. 120 V Repetitive peak reverse voltage: max. 150 V Repetitive peak forward current: max. 625 mA. APPLICATIONS Switching and general purposes in industrial equipment e.g. oscilloscopes, digital voltmeters and video output stages in colour television. handbook, halfpage k BAY80 DESCRIPTION The BAY80 is a switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package. a MAM246 The diode is type branded. Fig.1 Simplified outline (SOD27; DO-35) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 100 µs t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed circuit-board; lead length 10 mm. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 − − − − −65 − 9 3 1 400 +175 175 A A A mW °C °C see Fig.2; note 1 CONDITIONS MIN. −...