BAW56WT1

www.DataSheet4U.com BAW56WT1 Preferred Device Dual Switching Diode, Common Anode Features Pb−Free Package is Available http://onsemi.com CATHODE 1 2 CATHODE Symbol VR IF IFM(surge) Max 70 200 500 Unit V mA mA 3 1 ANODE 3 MAXIMUM RATINGS (TA = 25°C) Rating Reverse Voltage Forward Current Peak Forward Surge Current MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. SC−70 CASE 419 STYLE 4 A1 M G G 1 2 THERMAL CHARACTERISTICS (TA = 25°C) Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 200 Unit mW A1 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. 1.6 RqJA PD 625 300 2.4 RqJA TJ, Tstg 417 − 55 to +150 mW/°C °C/W mW mW/°C °C/W °C ORDERING INFORMATION Device BAW56WT1 BAW56WT1G Package SC−70 SC−70 (Pb−Free) Shipping † 3000/Tape & Reel 3000/Tape & Reel 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. †For information on tape and ree...