High Conductance Ultra Fast Diode
BAW56
BAW56
3
2 1 SOT-23
Small Signal Diode
3
A1
12
Connection Diagram 3
12
Absolute Maximum Ratings* TA = 25°C unl...
Description
BAW56
BAW56
3
2 1 SOT-23
Small Signal Diode
3
A1
12
Connection Diagram 3
12
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VRRM
Maximum Repetitive Reverse Voltage
85
IF(AV)
Average Rectified Forward Current
200
IFSM Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0 2.0
Tstg Storage Temperature Range
-55 to +150
TJ Operating Junction Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
150
Thermal Characteristics
Units
V mA
A A °C °C
Symbol
Parameter
PD Power Dissipation RθJA Thermal Resistance, Junction to Ambient
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
VR Breakdown Voltage VF Forward Voltage
IR Reverse Current
CT Total Capacitance trr Reverse Recovery Time
IR = 5.0 µA
IF = 1.0 mA IF = 10 mA IF = 50 mA IF = 150 mA VR = 70 V VR = 25 V, TA = 150°C VR = 70 V, TA = 150°C
VR = 0, f = 1.0 MHz
IF = IR = 10 mA, IRR = 1.0 mA, RL = 100 Ω
Value
350 357
Units
mW °C/W
Min
85
Max
715 855 1.0 1.25 2.5 30 50 2.0 6.0
Units
V
mV mV V V µA µA µA pF
ns
2001 Fairchild Semiconductor Corporation
BAW56, Rev. C
TRADEMARKS
The following are regi...
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