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BAW56

Fairchild

High Conductance Ultra Fast Diode

BAW56 BAW56 3 2 1 SOT-23 Small Signal Diode 3 A1 12 Connection Diagram 3 12 Absolute Maximum Ratings* TA = 25°C unl...


Fairchild

BAW56

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BAW56 BAW56 3 2 1 SOT-23 Small Signal Diode 3 A1 12 Connection Diagram 3 12 Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value VRRM Maximum Repetitive Reverse Voltage 85 IF(AV) Average Rectified Forward Current 200 IFSM Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond 1.0 2.0 Tstg Storage Temperature Range -55 to +150 TJ Operating Junction Temperature *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 150 Thermal Characteristics Units V mA A A °C °C Symbol Parameter PD Power Dissipation RθJA Thermal Resistance, Junction to Ambient Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions VR Breakdown Voltage VF Forward Voltage IR Reverse Current CT Total Capacitance trr Reverse Recovery Time IR = 5.0 µA IF = 1.0 mA IF = 10 mA IF = 50 mA IF = 150 mA VR = 70 V VR = 25 V, TA = 150°C VR = 70 V, TA = 150°C VR = 0, f = 1.0 MHz IF = IR = 10 mA, IRR = 1.0 mA, RL = 100 Ω Value 350 357 Units mW °C/W Min 85 Max 715 855 1.0 1.25 2.5 30 50 2.0 6.0 Units V mV mV V V µA µA µA pF ns 2001 Fairchild Semiconductor Corporation BAW56, Rev. C TRADEMARKS The following are regi...




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