D313

UTC D313 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC D313 is designed for use in general purpose amplifier and switching applications. 1 TO-220 1:BASE 2:COLLECTOR 3:EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Storage Temperature Junction Temperature SYMBOL VCBO VCEO VEBO Ic TSTG Tj VALUE 60 60 5 3 -55 ~ +150 150 UNIT V V V A °C °C ELECTRICAL CHARACTERISTICS(Ta=25°C) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter On voltage DC Current Gain SYMBOL BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) VBE(ON) hFE TEST CONDITIONS IC=1mA IC=10mA IE=100uA VCB=20V, IE=0 VEB=4V, IC=0 IC=2A, IB=0.2A VCE=2V, IC=1A IC=1A, VCE=2V IC=0.1A,VCE=2V MIN 60 60 5 TYP MAX UNIT V V V 0.1 1.0 1.0 1.5 40 40 320 mA mA V V CLASSIFICATION ON hFE RANK RANGE C 40-80 D 60-120 E 100-200 F 160-320 UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R203-001,A UTC D313 NPN EPITAXIAL PLANAR TRANSISTOR DC CURRENT GAINT SATURATION VOLTAGE v.s. COLLECTOR CURRENT 10000 1000 10 VCE(sat) (mV) 10 100 1000 10000 100 1000 hFE 100 1 Collector Current (mA) 10 10 100 1000 10000 Collector Current (mA) Ic=10IB V BE(SAT) v.s.Ic 10000 S OA 10 Collector Current (A) VBE(SAT) (mA) 1000 1 100 10 100 1000 10000 Collector Current (mA)...