SP0610T

SP 0610T SIPMOS ® Small-Signal Transistor P channel Enhancement mode Logic Level VGS(th) = -1.0..-2.0V Pin 1 G Pin 2 S Pin 3 D Type SP 0610T Type SP 0610T VDS -60 V ID -0.13 A RDS(on) 10 Ω Package SOT-23 Marking sSF Ordering Code Q67000-S088 Tape and Reel Information E6327 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values -60 -60 Unit V VDS V DGR RGS = 20 kΩ Gate source voltage Continuous drain current VGS ID ± 20 A -0.13 TA = 36 °C DC drain current, pulsed IDpuls -0.52 TA = 25 °C Power dissipation Ptot 0.36 W TA = 25 °C Semiconductor Group 1 Sep-13-1996 SP 0610T Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm Symbol Values -55 ... + 150 -55 ... + 150 ≤ 350 ≤ 285 E 55 / 150 / 56 Unit °C K/W Tj Tstg RthJA Therminal resistance, chip-substrate- reverse side 1)RthJSR Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS -60 -1.5 -0.1 -2 -1 7 -2 V VGS = 0 V, ID = -0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) -1 VGS=VDS, ID = -1 mA Zero gate voltage drain current IDSS -1 -60 µA VDS = -60 V, VGS = 0 V, Tj = 25 °C VDS = -60 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGS...