SNA-586

Product Description Stanford Microdevices’ SNA-586 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 5 GHz. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Typical IP3 at 850 MHz with 65mA is 32.5 dBm. These unconditionally stable amplifiers provide 18 dB of gain and 18.4 dBm of 1dB compressed power and require only a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional inductor are needed for operation. This MMIC is an ideal choice for wireless applications such as cellular, PCS, CDPD, wireless data and SONET. 25 20 SNA-586 Preliminary Preliminary DC-5 GHz, Cascadable GaAs HBT MMIC Amplifier NGA-586 Recommended for New Designs Small Signal Gain vs. Frequency @ ID=65mA dB 15 10 5 0 2 Product Features High Output IP3: 32.5 dBm @ 850 MHz Cascadable 50 Ohm Gain Block Patented GaAs HBT Technology Operates From Single Supply 8 Frequency GHz 4 6 Applications Cellular, PCS, CDPD, Wireless Data, SONET Units Min. Typ. 17.6 18.4 18.4 32.5 31.6 31.6 17.6 19.6 18.1 17.4 5000 1.4:1 1.4:1 22.3 21.6 21.3 4.0 4.4 4.9 254 5.4 Max. Electrical Specifications Symbol Parameters: Test Conditions: GHz Z0 = 50 Ohms, ID = 65 mA, T = 25°C Output Power at 1dB Compression f = 850...