2N2369

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N2369/D Switching Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 2N2369 2N2369A* *Motorola Preferred Device 3 2 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Emitter Voltage Collector– Base Voltage Emitter– Base Voltage Collector Current (10 ms pulse) Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 100°C Derate above 100°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VCBO VEBO IC(Peak) IC PD PD TJ, Tstg Value 15 40 40 4.5 500 200 0.36 2.06 0.68 6.85 – 65 to +200 Unit Vdc Vdc Vdc Vdc mA mA Watt mW/°C Watts mW/°C °C 1 CASE 22–03, STYLE 1 TO–18 (TO–206AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 486 147 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 10 mA, VBE = 0) Collector – Emitter Sustaining Voltage(1) (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mA, IB = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 150°C) Collector Cutoff Current (VCE = 20 Vdc, VBE = 0) Base Current (VCE = 20 Vdc, VBE = 0) 1. Pulse Test: Pulse Width 2N2369 2N2369A ICES 2N2369A IB 2N2369A — 0....