2N2222A

DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2222; 2N2222A NPN switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 29 Philips Semiconductors Product specification NPN switching transistors FEATURES High current (max. 800 mA) Low voltage (max. 40 V). APPLICATIONS Linear amplification and switching. DESCRIPTION NPN switching transistor in a TO-18 metal package. PNP complement: 2N2907A. 3 2N2222; 2N2222A PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION handbook, halfpage 1 3 2 MAM264 2 1 Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage 2N2222 2N2222A VCEO collector-emitter voltage 2N2222 2N2222A IC Ptot hFE fT collector current (DC) total power dissipation DC current gain transition frequency 2N2222 2N2222A toff turn-off time ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA Tamb ≤ 25 °C IC = 10 mA; VCE = 10 V IC = 20 mA; VCE = 20 V; f = 100 MHz 250 300 − − − 250 MHz MHz ns open base − − − − 75 30 40 800 500 − V V mA mW open emitter − − 60 75 V V CONDITIONS MIN. MAX. UNIT 1997 May 29 2 Philips Semiconductors Product specification NPN switching transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO 2N2222 2N2222A VCEO collector-emitter voltage 2N2222 2N2222A VEBO emitter-base voltage 2N2222 2N2222A IC ICM IBM Ptot Tstg Tj Tamb collector current (DC) peak coll...