2N1613

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1613 NPN medium power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 11 Philips Semiconductors Product specification NPN medium power transistor FEATURES Low current (max. 500 mA) Low voltage (max. 50 V). APPLICATIONS High-speed switching and amplification. DESCRIPTION NPN medium power transistor in a TO-39 metal package. 3 1 handbook, halfpage 2 2N1613 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION 3 2 1 MAM317 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain transition frequency Tamb ≤ 25 °C IC = 150 mA; VCE = 10 V IC = 50 mA; VCE = 10 V; f = 100 MHz open base CONDITIONS open emitter − − − − 40 60 MIN. MAX. 75 50 1 0.8 120 − MHz V V A W UNIT 1997 Apr 11 2 Philips Semiconductors Product specification NPN medium power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation Tamb ≤ 25 °C Tcase = 100 °C Tcase ≤ 25 °C Tstg Tj Tamb storage temperature junction temperature operating ambient temperature CO...