29F010

M29F010B 1 Mbit (128Kb x8, Uniform Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45ns PROGRAMMING TIME – 8µs per Byte typical 8 UNIFORM 16 Kbytes MEMORY BLOCKS PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits PLCC32 (K) TSOP32 (N) 8 x 20mm s s s s s ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend 32 s UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming 1 PDIP32 (P) s LOW POWER CONSUMPTION – Standby and Automatic Standby 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: 20h A0-A16 W M29F010B E G 17 8 DQ0-DQ7 VCC s Figure 1. Logic Diagram s s VSS AI02735 July 1999 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/20 M29F010B Figure 2A. PLCC Connections Figure 2B. TSOP Connections 1 32 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 A14 A13 A8 A9 A11 G A10 E DQ7 A11 A9 A8 A13 A14 NC W VCC NC A16 A15 A12 A7 A6 A5 A4 1 32 9 M29F010B 25 8 9 M29F010B 25 24 17 DQ1 DQ2 VSS DQ3 DQ4 DQ5 DQ6 16 17 AI02738 G A10 E DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3 A12 A15 A16 NC VCC W NC AI02737 Figure 2C. PDIP Connections Table 1. Signal Names A0-A16...