28C011T

1 Megabit (128K x 8-Bit) EEPROM VCC VSS RES OE CE WE RES A0 A6 Address Buffer and Latch Y Decoder Y Gating I/O Buffer and Input Latch Control Logic Timing High Voltage Generator I/O0 I/O7 RDY/Busy 28C011T A7 A16 X Decoder Memory Array Data Latch Memory Logic Diagram FEATURES: 128k x 8-bit EEPROM RAD-PAK® radiation hardened against natural space radiation Total dose hardness: - > 100 krad (Si), depending upon space mission Excellent Single Event Effects: - No Latchup > 120 MeV/mg/cm2 - SEU > 90 MeV/mg/cm2 read mode Package: - 32-pin RAD-PAK® flat pack package - JEDEC-approved byte-wide pinout High speed: - 120, 150, and 200 ns maximum access times available High endurance: - 10,000 cycles/byte, 10-year data retention Page write mode: - 1 to 128 byte page Low power dissipation - 20 mW/MHz active (typical) - 110 µW standby (maximum) Screening per TM 5004 QCI per TM5005 DESCRIPTION: Maxwell Technologies’ 28C011T high-density 1 Megabit (128K x 8-Bit) EEPROM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 28C011T is capable of in-system electrical byte and page programmability. It has a 128-byte page programming function to make its erase and write operations faster. It also features Data Polling and a Ready / Busy signal to indicate the completion of erase and programming operations. In the 28C011T, hardware data protection is provided with the RES pin, in addition to noise protection on the ...