28C17A
16K (2K x 8) CMOS EEPROM
FEATURES
Fast Read Access Time—150 ns CMOS Technology for Low Power Dissipation - 30 mA Active - 100 µA Standby Fast Byte Write Time—200 µs or 1 ms Data Retention >200 years High Endurance - Minimum 104 Erase/Write Cycles Automatic Write Operation - Internal Control Timer - Auto-Clear Before Write Operation - On-Ch...
