4K (512 x 8) CMOS EEPROM
28C04A
4K (512 x 8) CMOS EEPROM
FEATURES
• Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation - 30...
Description
28C04A
4K (512 x 8) CMOS EEPROM
FEATURES
Fast Read Access Time—150 ns CMOS Technology for Low Power Dissipation - 30 mA Active - 100 µA Standby Fast Byte Write Time—200 µs or 1 ms Data Retention >200 years Endurance - Minimum 104 Erase/Write Cycles - Automatic Write Operation - Internal Control Timer - Auto-Clear Before Write Operation - On-Chip Address and Data Latches Data Polling Chip Clear Operation Enhanced Data Protection - VCC Detector - Pulse Filter - Write Inhibit 5-Volt-Only Operation Organized 512x8 JEDEC standard pinout - 24-pin Dual-In-Line Package - 32-pin PLCC Package Available for Extended Temperature Ranges: - Commercial: 0˚C to +70˚C - Industrial: -40˚C to +85˚C
PACKAGE TYPES
DIP
A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS
1 2 3 4 5 6 7 8 9 10 11 12
24 23 22 21 20 19 18 17 16 15 14 13
Vcc A8 NC WE OE NC CE I/O7 I/O6 I/O5 I/O4 I/O3
32 Vcc 31 WE 18 19
28C04A
2 NC 1 NU
4 A7 3 NC
PLCC
A6 A5 A4 A3 A2 A1 A0 NC I/O0
5 6 7 8 9 10 11 12 13
30 NC 29 A8 28 NC 27 NC 26 NC 25 OE 24 NC 23 CE 22 I/O7 21 I/O6 20
28C04A
14 15 16
Pin 1 indicator on PLCC on top of package
BLOCK DIAGRAM
I/O0 I/O7
DESCRIPTION
The Microchip Technology Inc. 28C04A is a CMOS 4K non-volatile electrically Erasable and Programmable Read Only Memory (EEPROM). The 28C04A is accessed like a static RAM for the read or write cycles without the need of external components. During a “byte write”, the address and data are latched internally, freeing the microprocessor addr...
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