TG2213S

TG2213S TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2213S RF SPDT Switch Antenna switch for Bluetooth class 2, 3 Diversity antenna switching Filter switching for mobile communication Local signal switching Unit: mm Features · · · · Low insertion Loss: LOSS = 0.35dB (typ.) @1.0 GHz = 0.45dB (typ.) @2.5 GHz High isolation: ISL = 24dB (typ.) @1.0 GHz = 22dB (typ.) @2.5 GHz Low voltage operation: VCON = 0 V/2.7 V Small package: sES6 package (1.5 × 1.5 × 0.52 mm) Pin Assignment, Marking (top view) VC1 6 RFcom 5 VC2 4 Block Diagram VC1 6 RFcom 5 VC2 4 JEDEC JEITA TOSHIBA ― ― 2-2Q1A UP 1 RF1 2 GND 3 RF2 1 RF1 2 GND 3 RF2 Weight: 2.1 mg (typ.) Maximum Ratings (Ta = 25°C) Characteristics Control voltage Input power Total power dissipation Operating temperature range Storage temperature range Symbol VC1 VC2 Pi PD (Note) Topr Tstg Rating 6 6 200 100 −40 to 85 −55 to 125 2 Unit V mW mW °C °C Note: When mounted on the glass epoxy of 2.5 cm ´ 1.6 t 1 2002-11-14 TG2213S Electrical Characteristics (VCON(Hi) = 2.7 V, VCON(LO) = 0 V, Ta = 25°C, Zg = Zl = 50 W) Characteristics Symbol LOSS (1) Insertion loss LOSS (2) LOSS (3) ISL (1) Isolation ISL (2) ISL (3) Input power at 1dB gain compression Control current Switching time Pi1dB ICON tsw Test Circuit 1 1 1 1 1 1 1 ¾ 1 Test Condition f = 1.0 GHz, Pi = 0dBmW f = 2.0 GHz, Pi = 0dBmW f = 2.5 GHz, Pi = 0dBmW f = 1.0 GHz, Pi = 0dBmW f = 2.0 GHz, Pi = 0dBmW f = 2.5 GHz, Pi = 0dBmW f = 2.5 GHz no RF signal input Min ¾ ¾ ¾ 20...