RN1307

RN1307~RN1309 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1307,RN1308,RN1309 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors. l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2307~RN2309 Unit: mm Equivalent Circuit and Bias Resistor Values Type No. RN2207 RN2208 RN2209 R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage RN1307 Emitter-base voltage RN1308 RN1309 Collector current Collector power dissipation Junction temperature Storage temperature range Ic Pc Tj Tstg VEBO Symbol VCBO VCEO Rating 50 50 6 7 15 100 100 150 −55~150 JEDEC EIAJ TOSHIBA Weight: 0.006g Unit V V ― SC-70 2-2E1A V mA mW °C °C 1 2001-06-07 RN1307~RN1309 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current RN1307 Emitter cut-off current RN1308 RN1309 RN1307 DC current gain RN1308 RN1309 Collector-emitter saturation voltage RN1307 Input voltage (ON) RN1308 RN1309 RN1307 Input voltage (OFF) RN1308 RN1309 Translation frequency Collector output capacitance RN1307 Input resistor RN1308 RN1309 RN1307 Resistor ratio RN1308 RN1309 R1/R2 R1 fT Cob VI (OFF) VI (ON) VCE (sat) hFE IEBO Symbol ICBO ICEO Test Circuit ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― VCE = 10V, IC = 5mA VCB = 10V, IE = 0, f = 1MHz VCE = 5V, IC = 0.1mA VCE = 0.2V, IC = 5mA IC = 5mA, IB = 0.25mA VCE ...