SPB04N60S5

SPP04N60S5 SPB04N60S5 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance P-TO220-3-1 VDS RDS(on) ID P-TO263-3-2 600 0.95 4.5 V Ω A P-TO220-3-1 2 1 23 Type Package Ordering Code SPP04N60S5 SPB04N60S5 P-TO220-3-1 P-TO263-3-2 Q67040-S4200 Q67040-S4201 Marking 04N60S5 04N60S5 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol ID Value 4.5 2.8 Unit A Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 3.4 A, VDD = 50 V I D puls EAS 9 130 0.4 4.5 ±20 ±30 mJ Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 4.5 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS Gate source voltage AC (f >1Hz) Power dissipation, T C = 25°C A V W °C VGS Ptot T j , T stg 50 -55... +150 Operating and storage temperature Rev. 2.1 Page 1 2004-03-30 SPP04N60S5 SPB04N60S5 Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, ID = 4.5 A, Tj = 125 °C Symbol dv/dt Value 20 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, 1.6 mm (0.063 in.) from case for 10s 3) Electrical Characteristics, at Tj=25°C unless otherwise specified ...