SPN04N60S5

SPN04N60S5 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Worldwide best RDS(on) in SOT 223 VDS RDS(on) ID 600 0.95 0.8 SOT-223 4 V Ω A Ultra low gate charge Extreme dv/dt rated Ultra low effective capacitances Improved transconductance 3 2 1 VPS05163 Type SPN04N60S5 Package SOT-223 Ordering Code Q67040-S4211 Marking 04N60S5 Maximum Ratings Parameter Continuous drain current TA = 25 °C TA = 70 °C Pulsed drain current, tp limited by Tjmax TA = 25 °C Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, T A = 25°C Symbol ID Value 0.8 0.65 Unit A ID puls VGS VGS Ptot Tj , Tstg 3 ±20 ±30 1.8 -55... +150 W °C V Operating and storage temperature Rev. 2.1 Page 1 2004-03-30 SPN04N60S5 Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, ID = 4.5 A, Tj = 125 °C Symbol dv/dt Value 20 Unit V/ns Thermal Characteristics Parameter Symbol min. RthJS RthJA Values typ. max. Unit Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) - 20 110 - 70 K/W Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) IDSS ID=200µΑ, VGS=V DS VDS=600V, VGS=0V, Tj...