SPU04N60C2

Final data SPD04N60C2 SPU04N60C2 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved noise immunity P-TO251 Product Summary VDS RDS(on) ID 600 0.95 4.5 P-TO252 V Ω A Type SPD04N60C2 SPU04N60C2 Package P-TO252 P-TO251 Ordering Code Q67040-S4307 Q67040-S4306 Marking 04N60C2 04N60C2 Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol ID Value 4.5 2.8 Unit A Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID =3.6A, VDD =50V ID puls EAS EAR IAR dv/dt VGS Ptot Tj , Tstg 9 130 0.4 4.5 6 ±20 50 -55... +150 A V/ns V W °C mJ Avalanche energy, repetitive tAR limited by Tjmax 1) ID =4.5A, VDD =50V Avalanche current, repetitive tAR limited by Tjmax Reverse diode dv/dt IS =4.5A, VDS < VDD , di/dt=100A/µs, Tjmax=150°C Gate source voltage Power dissipation, TC = 25°C Operating and storage temperature Page 1 2002-10-07 Final data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Linear derating factor Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown voltage VG...