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SFU9220 Dataheets PDF



Part Number SFU9220
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Advanced Power MOSFET
Datasheet SFU9220 DatasheetSFU9220 Datasheet (PDF)

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -200V Lower RDS(ON) : 1.111 Ω (Typ.) 1 SFR/U9220 BVDSS = -200 V RDS(on) = 1.5 Ω ID = -3.1 A D-PAK 2 1 3 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Con.

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -200V Lower RDS(ON) : 1.111 Ω (Typ.) 1 SFR/U9220 BVDSS = -200 V RDS(on) = 1.5 Ω ID = -3.1 A D-PAK 2 1 3 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C) * 2 O 1 O 1 O 3 O o o Value -200 -3.1 -1.96 1 O Units V A A V mJ A mJ V/ns W W W/ C o -12 + _ 30 256 -3.1 3.0 -5.0 2.5 30 0.24 - 55 to +150 Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8“ from case for 5-seconds o TJ , TSTG TL o C 300 Thermal Resistance Symbol RθJC RθJA RθJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ. ---Max. 4.17 50 110 o Units C/W * When mounted on the minimum pad size recommended (PCB Mount). Rev. B ©1999 Fairchild Semiconductor Corporation SFR/U9220 Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( “ Miller “ ) Charge Min. Typ. Max. Units -200 --2.0 ------------------0.18 ------2.2 415 70 26 12 22 33 15 15 3.3 7.5 ---4.0 -100 100 -10 -100 1.5 -540 105 40 35 55 75 40 19 --nC ns pF µA Ω Ω V V nA P-CHANNEL POWER MOSFET Electrical Characteristics (TC=25oC unless otherwise specified) Test Condition VGS=0V,ID=-250µA See Fig 7 VDS=-5V,ID=-250µA VGS=-30V VGS=30V VDS=-200V VDS=-160V,TC=125 C VGS=-10V,ID=-1.6A VDS=-40V,ID=-1.6A 4 O 4 O o o V/ C ID=-250µA VGS=0V,VDS=-25V,f =1MHz See Fig 5 VDD=-100V,ID=-3.5A, RG=18Ω See Fig 13 4 O 5 O VDS=-160V,VGS=-10V, ID=-3.5A See Fig 6 & Fig 12 4 O 5 O Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1 O Min. Typ. Max. Units --------125 0.59 -3.1 -12 -5.0 --A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS=-3.1A,VGS=0V TJ=25 C,IF=-3.5A diF/dt=100A/µs 4 O o o O 4 Notes ; Temperature 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction o 2 L=40mH, I =-3.1A, V =-50V, R =27Ω*, Starting T =25 C O AS DD G J o 3 ISD < _ 300A/µs, VDD _ _-3.5A, di/dt < < BVDSS , Starting T J =25 C O _ < Pulse Test : Pulse Width = 250 µ s, Duty Cycle 2% 4 O 5 Essentially Independent of Operating Temperature O P-CHANNEL POWER MOSFET Fig 1. Output Characteristics 1 10 V GS SFR/U9220 Fig 2. Transfer Characteristics [A] -ID , Drain Current 101 -ID , Drain Current [A] Top : - 15 V - 10 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom : - 4.5 V 0 10 100 150 oC 25 oC @ Notes : =0V 1. V GS 2. V = -40 V DS - 55 oC 3. 250 µs Pulse Test 10-1 @ Notes : 1. 250 µs Pulse Test = 25 oC 2. T C 100 1 10 10-1 10-1 2 4 6 8 10 -VDS , Drain-Source Voltage [V] -VGS , Gate-Source Voltage [V] RDS(on) , [ Ω] Drain-Source On-Resistance Fig 3. On-Resistance vs. Drain Current 5 [A] Fig 4. Source-Drain Diode Forward Voltage 101 4 3 = -10 V V GS -IDR , Reverse Drain Current 100 150 oC 25 oC @ Notes : =0V 1. V GS 2. 250 µs Pulse Test 2 1 VGS = -20 V 0 0 2 4 6 8 10 12 14 @ Note : T = 25 oC J 10-1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -ID , Drain Current [A] -VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage Ciss= Cgs+ C ( Cds= shorted ) gd Coss= Cds+ C gd Fig 6. Gate Charge vs. Gate-Source Voltage [V] 800 [pF] Crss= Cgd 600 C iss 400 C oss @ Notes : 1. V =0V GS 2. f = 1 MHz -VGS , Gate-Source Voltage 10 VDS = -40 V VDS = -100 V VDS = -160 V Capacitance 5 200 C rss @ Notes : I =-3.5 A D 0 0 3 6 9 12 15 0 100 1 10 -VDS , Drain-Source Voltage [V] QG , Total Gate Charge [nC] SFR/U9220 Drain-Source Breakdown Voltage P-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature Drain-Source On-Resistance 3.0 Fig 7. Breakdown Voltage vs. Temperature 1.2 -BV DSS , (Normalized) RDS(on) , (Normalized) 2.5 1.1 2.0 1.0 1.5 1.0 @ Notes : = -10 V 1. V GS 2. I = -1.8 A D -50 -25 0 25 50 75 100 125 150 175 0.9 @ Notes : =0V 1. V GS 2. I = -250 µA D -50 -25 0 25 50 75 100 o 0.5 0.8 -75 125 150 175 0.0 -75 TJ , J.


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