Document
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -200V Lower RDS(ON) : 1.111 Ω (Typ.)
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SFR/U9220
BVDSS = -200 V RDS(on) = 1.5 Ω ID = -3.1 A
D-PAK
2 1 3
I-PAK
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
o Total Power Dissipation (TA=25 C) * 2 O 1 O 1 O 3 O o o
Value -200 -3.1 -1.96
1 O
Units V A A V mJ A mJ V/ns W W W/ C
o
-12 + _ 30 256 -3.1 3.0 -5.0 2.5 30 0.24 - 55 to +150
Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8“ from case for 5-seconds
o
TJ , TSTG TL
o
C
300
Thermal Resistance
Symbol RθJC RθJA RθJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ. ---Max. 4.17 50 110
o
Units C/W
* When mounted on the minimum pad size recommended (PCB Mount).
Rev. B
©1999 Fairchild Semiconductor Corporation
SFR/U9220
Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( “ Miller “ ) Charge Min. Typ. Max. Units -200 --2.0 ------------------0.18 ------2.2 415 70 26 12 22 33 15 15 3.3 7.5 ---4.0 -100 100 -10 -100 1.5 -540 105 40 35 55 75 40 19 --nC ns pF µA Ω Ω V V nA
P-CHANNEL POWER MOSFET
Electrical Characteristics (TC=25oC unless otherwise specified)
Test Condition VGS=0V,ID=-250µA See Fig 7 VDS=-5V,ID=-250µA VGS=-30V VGS=30V VDS=-200V VDS=-160V,TC=125 C VGS=-10V,ID=-1.6A VDS=-40V,ID=-1.6A
4 O 4 O
o
o V/ C ID=-250µA
VGS=0V,VDS=-25V,f =1MHz See Fig 5 VDD=-100V,ID=-3.5A, RG=18Ω See Fig 13
4 O 5 O
VDS=-160V,VGS=-10V, ID=-3.5A See Fig 6 & Fig 12
4 O 5 O
Source-Drain Diode Ratings and Characteristics
Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
1 O
Min. Typ. Max. Units --------125 0.59 -3.1 -12 -5.0 --A V ns µC
Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS=-3.1A,VGS=0V TJ=25 C,IF=-3.5A diF/dt=100A/µs
4 O
o o
O
4
Notes ; Temperature 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction o 2 L=40mH, I =-3.1A, V =-50V, R =27Ω*, Starting T =25 C O AS DD G J o 3 ISD < _ 300A/µs, VDD _ _-3.5A, di/dt < < BVDSS , Starting T J =25 C O _ < Pulse Test : Pulse Width = 250 µ s, Duty Cycle 2% 4 O 5 Essentially Independent of Operating Temperature O
P-CHANNEL POWER MOSFET
Fig 1. Output Characteristics
1 10 V GS
SFR/U9220
Fig 2. Transfer Characteristics
[A] -ID , Drain Current
101
-ID , Drain Current
[A]
Top :
- 15 V - 10 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom : - 4.5 V 0 10
100
150 oC 25 oC @ Notes : =0V 1. V GS 2. V = -40 V DS - 55 oC 3. 250 µs Pulse Test
10-1
@ Notes : 1. 250 µs Pulse Test = 25 oC 2. T C 100
1 10
10-1
10-1
2
4
6
8
10
-VDS , Drain-Source Voltage [V]
-VGS , Gate-Source Voltage [V]
RDS(on) , [ Ω] Drain-Source On-Resistance
Fig 3. On-Resistance vs. Drain Current
5
[A]
Fig 4. Source-Drain Diode Forward Voltage
101
4
3
= -10 V V GS
-IDR , Reverse Drain Current
100 150 oC 25 oC @ Notes : =0V 1. V GS 2. 250 µs Pulse Test
2
1 VGS = -20 V 0 0 2 4 6 8 10 12 14 @ Note : T = 25 oC J
10-1 0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
-ID , Drain Current [A]
-VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
Ciss= Cgs+ C ( Cds= shorted ) gd Coss= Cds+ C gd
Fig 6. Gate Charge vs. Gate-Source Voltage
[V]
800
[pF]
Crss= Cgd 600 C iss
400
C oss @ Notes : 1. V =0V GS 2. f = 1 MHz
-VGS , Gate-Source Voltage
10
VDS = -40 V VDS = -100 V VDS = -160 V
Capacitance
5
200
C rss
@ Notes : I =-3.5 A D 0 0 3 6 9 12 15
0 100
1 10
-VDS , Drain-Source Voltage [V]
QG , Total Gate Charge [nC]
SFR/U9220
Drain-Source Breakdown Voltage
P-CHANNEL POWER MOSFET
Fig 8. On-Resistance vs. Temperature
Drain-Source On-Resistance
3.0
Fig 7. Breakdown Voltage vs. Temperature
1.2
-BV DSS , (Normalized)
RDS(on) , (Normalized)
2.5
1.1
2.0
1.0
1.5
1.0 @ Notes : = -10 V 1. V GS 2. I = -1.8 A D -50 -25 0 25 50 75 100 125 150 175
0.9
@ Notes : =0V 1. V GS 2. I = -250 µA D -50 -25 0 25 50 75 100
o
0.5
0.8 -75
125
150
175
0.0 -75
TJ , J.