Advanced Power MOSFET
Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n ...
Description
Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge o n 175 C Operating Temperature n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V n Low RDS(ON) : 0.444 Ω (Typ.)
SFS9520
BVDSS = -100 V RDS(on) = 0.6 Ω ID = -4.6 A
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds
o 2 O 1 O 1 O 3 O o o
Value -100 -4.6 -3.2
1 O
Units V A A V mJ A mJ V/ns W W/ C
o
-18 ±30 140 -4.6 2.9 -6.5 29 0.19 - 55 to +175
o
C
300
Thermal Resistance
Symbol RθJC RθJA Characteristic Junction-to-Case Junction-to-Ambient Typ. --Max. 5.17 62.5 Units
o
C/W
Rev. C
SFS9520
Electrical Characteristics (TC=25oC unless otherwise specified)
Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage ,...
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