SFM9214

Advanced Power MOSFET FEATURES ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = -250V ν Lower RDS(ON) : 3.5 Ω (Typ.) SFM9214 BVDSS = -250 V RDS(on) = 4.0 Ω ID = -0.45 A SOT-223 2 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TA=25 C) Continuous Drain Current (TA=70 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C) * Linear Derating Factor * o o Value -250 -0.45 -0.3 1 O Units V A A V mJ A mJ V/ns W W/ C o -3.6 + _ 30 100 -0.45 0.16 -4.8 1.63 0.013 - 55 to +150 O 1 O 1 O 3 O 2 Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8＂ from case for 5-seconds o C 300 Thermal Resistance Symbol RθJA Characteristic Junction-to-Ambient * Typ. -Max. 77 Units o C/W * When mounted on the minimum pad size recommended (PCB Mount). Rev. B1 2001 Fairchild Semiconductor Corporation SFM9214 Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage ,...