Document
SFH690ABT/ AT/ BT/ CT
Vishay Semiconductors
Optocoupler, Phototransistor Output, SOP-4, Mini-Flat Package
Features
• SOP (Small Outline Package) • Isolation Test Voltage, 3750 VRMS (1.0 s) • High Collector-Emitter Breakdown Voltage, VCEO = 70 V • Low Saturation Voltage • Fast Switching Times • Temperature Stable • Low Coupling Capacitance • End-Stackable, .100 " (2.54 mm) Spacing • Lead-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
A C
1 2
4
C
3 E
i179065
e3
Pb
Pb-free
Agency Approvals
• UL1577, File No. E52744 System Code U • CSA 93751 • BSI IEC60950 IEC60065
Applications
High density mounting or space sensitive PCBs PLCs Telecommunication
The coupling devices are designed for signal transmission between two electrically separated circuits. The SFH690 series is available only on tape and reel. There are 2000 parts per reel. Marking for SFH690AT is SFH690A; SFH690BT is SFH690B; SFH690CT is SFH690C; SFH690ABT will be marked as SFH690A or SFH690B.
Order Information
Part SFH690ABT SFH690AT SFH690BT SFH690CT Remarks CTR 50 - 300 %, SMD-4 CTR 50 - 150 %, SMD-4 CTR 100 - 300 %, SMD-4 CTR 100 - 200 %, SMD-4
Description
The SFH690ABT/ AT/ BT/ CT family has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 4-pin 100 mil lead pitch miniflat package. It features a high current transfer ratio, low coupling capacitance, and high isolation voltage.
For additional information on the available options refer to Option Information.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Reverse voltage DC Forward current Surge forward current Power dissipation tp ≤ 10 µs Test condition Symbol VR IF IFSM Pdiss Value 6.0 50 2.5 80 Unit V mA A mW
Document Number 83686 Rev. 1.5, 20-Apr-04
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SFH690ABT/ AT/ BT/ CT
Vishay Semiconductors Output
Parameter Collector-emitter voltage Emitter-collector voltage Collector current tp ≤ 1.0 ms Power dissipation Test condition Symbol VCE VEC IC IC Pdiss Value 70 7.0 50 100 150 Unit V V mA mA mW
Coupler
Parameter Isolation test voltage between emitter and detector (1.0 s) Creepage Clearance Insulation thickness between emitter and detector Comparative tracking index per DIN IEC 112/VDEO 0303, part 1 Isolation resistance VIO = 500 V, Tamb = 25 °C VIO = 500 V, Tamb = 100 °C Storage temperature range Ambient temperature range Junction temperature Soldering temperature max. 10 s Dip soldering distance to seating plane ≥1.5 mm RIO RIO Tstg Tamb Tj Tsld Test condition Symbol VISO Value 3750 ≥ 5.33 ≥ 5.08 ≥ 0.4 ≥ 17.