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SF5J42

Toshiba Semiconductor

SILICON PLANAR TYPE (MEDIUM POWER CONTROL APPLICATIONS)

SF5G42,SF5J42 TOSHIBA THYRISITOR SILICON PLANAR TYPE SF5G42,SF5J42 MEDIUM POWER CONTROL APPLICATIONS l Repetitive Peak ...


Toshiba Semiconductor

SF5J42

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SF5G42,SF5J42 TOSHIBA THYRISITOR SILICON PLANAR TYPE SF5G42,SF5J42 MEDIUM POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage : VDRM = 400, 600V Repetitive Peak Reverse Voltage : VRRM = 400, 600V l Average On−State Current l JEDEC TO−220AB Package. : IT(AV) = 5A Unit: mm MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off−State Voltage and Repetitive Peak Reverse Voltage (RGK = 330Ω) Non−Repetitive Peak Reverse Voltage (Non−Repetitive<5ms, Tj = 0~125°C, RGK = 330Ω) SF5G42 SF5J42 SF5G42 VRSM SF5J42 IT (AV) IT (RMS) ITSM I t PGM PG (AV) VFGM VRGM IGM Tj Tstg 2 SYMBOL RATING 400 UNIT VDRM VRRM V 600 500 V 720 5 7.8 80 (50Hz) 88 (60Hz) 32 0.5 0.05 5 −5 200 −40~125 −40~125 A A A A s W W V V mA °C °C 2 Average On−State Current (Half Sine Waveform Tc = 91°C) R.M.S On−State Current Peak One Cycle Surge On−State Current (Non−Repetitive) I t Limit Value Peak Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range 2 JEDEC JEITA TOSHIBA Weight: 2g TO−220AB ― 13−10G1B Note: Should be used with gate resistance as follows. 1 2001-07-10 SF5G42,SF5J42 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current and Repetitive Peak Reverse Current Peak On−State Voltage Gate Trigger Voltage Gate Trigger Current Gate Non−Trigger Voltage Critical Rate of Rise of Off−State Voltage Holding Current Thermal Resistance SYMBOL IDR...




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