SF0R3G42

SF0R3G42 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF0R3G42 LOW POWER SWITCHING AND CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage : VDRM = 400V Repetitive Peak Reverse Voltage : VRRM = 400V l Average On−State Current l Plastic Mold Type. : IT (AV) = 300mA Unit: mm MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off-State Voltage and Repetitive Peak Reverse Voltage (RGK = 1kΩ) Non−Repetitive Peak Reverse Voltage (Non-Repetitive<5ms, RGK = 1kΩ, Tj = 0 ~ 125°C) Average On−State Current (Half Sine Waveform Ta = 45°C) R.M.S On−State Current Peak One Cycle Surge On−State Current (Non-Repetitive) I t Limit Value Peak Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range 2 SYMBOL VDRM VRRM VRSM IT (AV) IT (RMS) ITSM I t PGM PG (AV) VFGM VRGM IGM Tj Tstg 2 RATING 400 UNIT V 500 V 300 450 9 (50Hz) 9.9 (60Hz) 0.4 0.1 0.01 3.5 −5 125 −40~125 −40~125 mA mA A A s W W V V mA °C °C 2 JEDEC JEITA TOSHIBA Weight: 0.2g TO−92 SC−43 13−5A1A Note: Should be used with gate resistance as follows. 1 2001-07-13 SF0R3G42 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current and Repetitive Peak Reverse Current Peak On−State Voltage Gate Trigger Voltage Gate Trigger Current Gate Non−Trigger Voltage Holding Current Thermal Resistance SYMBOL IDRM IRRM VTM VGT IGT VGD IH Rth (j−a) TEST CONDITION VDRM = VRRM = Rated RGK = 1kΩ, Tj ...