SEMD6
NPN/PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver...
SEMD6
NPN/
PNP Silicon Digital
Transistor Array Preliminary data Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated
NPN/
PNP Transistors in one package Built in bias resistor (R1=4.7kΩ) Tape loading orientation
C1 B2 5 E2 4
4 5 3 6 1 2
Top View
3 2 1
Marking on SOT666 package (for example W R) corresponds to pin 1 of device Position in tape: pin 1 same of feed hole side
6
R1 TR1
R1 TR2
4 5 6
Direction of Unreeling
Type SEMD6
Maximum Ratings Parameter
Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 75 °C Junction temperature Storage temperature
Thermal Resistance
Junction - soldering point 1)
1For calculation of R thJA please refer to Application Note Thermal Resistance
WR
1 E1
2 B1
3 C2
EHA07290
Marking W2
Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg
Value 50 50 10 15 100 250 150 -65 ... 150
Unit V
mA mW °C
RthJS
≤ 300
K/W
1
Feb-26-2004
SEMD6
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 40 V, IE = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0....