SEMB10

SEMB10 PNP Silicon Digital Transistor Array Preliminary data Switching circuit, inverter, interface circuit, driver circuit Two ( galvanic) internal isolated Transistors with good matching in one package Built in bias resistors ( R1=2,2kΩ, R2 =47kΩ) C1 6 B2 5 E2 4 4 5 3 6 1 2 R2 R1 TR1 R2 1 E1 2 B1 3 C2 EHA07173 TR2 R1 Type SEMB10 Maximum Ratings Parameter Marking W5 Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Value 50 50 5 10 100 250 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 75 °C Junction temperature Storage temperature Thermal Resistance mA mW °C Junction - soldering point 1) RthJS ≤ 300 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Mar-01-2004 SEMB10 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 5 V, IC = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V Input resistor Resistor ratio R1 R1/R2 1.5 2.2 2.9 Vi(on) 0.5 1.1 Vi(off) 0.4 0.8 VCEsat 0.3 hFE 7...