S DM8401
J UNE 21, 2005 ver1.3
Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)
P R ODUC T S UMMAR Y ...
S DM8401
J UNE 21, 2005 ver1.3
Dual E nhancement Mode Field E ffect
Transistor ( N and P Channel)
P R ODUC T S UMMAR Y (N-C hannel)
VDS S
ID R DS (ON) ( m W ) Max
30V 7.6A
20 @ VGS = 10V 40 @ VGS = 4.5V
P R ODUC T S UMMAR Y (P -C hannel)
VDS S -30V
ID -5.3A
R DS (ON) ( m W ) Max
45 @ VGS = -10V 60 @ VGS = -4.5V
D1 D1 D2 D2
87 65
S O-8
1
1234
S1 G1 S2 G2
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol N-C hannel P-C hannel Unit
Drain-S ource Voltage
VDS 30 -30
V
Gate-S ource Voltage
VGS 20 20
V
Drain C urrent-C ontinuous a @ TJ=25 C -P ulsed b
ID 7.6 -5.3 IDM 30 -20
A A
Drain-S ource Diode Forward C urrent a
IS 1.7 -1.7 A
Maximum P ower Dissipation a
PD 2.0 W
Operating Junction and S torage Temperature R ange
TJ, TSTG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a
R JA
62.5 C/W
1
S DM8401
N-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
P a ra meter
S ymbol Condition
Min Typ C Max Unit
5 OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current Gate-Body Leakage
ON CHARACTERISTICS b
Gate Threshold Voltage
BVDSS VGS =0V, ID =250uA
30
IDSS VDS =24V, VGS =0V
IGSS VGS = 20V, VDS =0V
V 1 uA 100 nA
VGS(th) VDS =VGS, ID = 250uA 1 1.7 3 V
Drain-S ource On-S tate R esistance
R DS(ON)
VGS =10V, ID =7A VGS =4.5V, ID=6A
14 20 m ohm 24 40 m ohm
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS c
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