Dual-band RF front-end
INTEGRATED CIRCUITS
SA1920 Dual-band RF front-end
Product specification Supersedes data of 1998 Apr 07 IC17 Data Handbo...
Description
INTEGRATED CIRCUITS
SA1920 Dual-band RF front-end
Product specification Supersedes data of 1998 Apr 07 IC17 Data Handbook 1999 Mar 02
Philips Semiconductors
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
DESCRIPTION
The SA1920 is an integrated dual-band RF front-end that operates at both cellular (AMPS, GSM and TDMA) and PCS/DCS (TDMA and GSM) frequencies, and is designed in a 13 GHz fT BiCMOS process—QUBiC1. The low-band is a combined low-noise amplifier (LNA) and mixer. The LNA has a 1.7 dB noise figure at 881 MHz with 17.5 dB of gain and an IIP3 of –5 dBm. The wide-dynamic range mixer has a 10 dB noise figure at 881 MHz with 9.5 dB of gain and an IIP3 of +5 dBm. The high-band contains a receiver front-end, doubler and a high frequency transmit mixer intended for closed loop transmitters. One advantage of the high-band architecture is an image-rejection mixer with over 30 dB of image rejection; thus, eliminating external filter cost while saving board space. The system noise figure is 4.2 dB at 1960 MHz with a power gain of 23.5 dB and an IIP3 of –12.5 dB.
FEATURES
Low current consumption Outstanding low- and high-band noise figure Excellent gain stability versus temperature and supply Image reject high-band mixer with over 30 dB of rejection Increased low-band LNA gain compression during analog LO input and output buffers Frequency doubler On chip logic for network selection and power down Very small outline package
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