S822T/S822TW/S822TRW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Observe precautions for handling. Electrostatic...
S822T/S822TW/S822TRW
Vishay Telefunken
Silicon
NPN Planar RF
Transistor
Observe precautions for handling. Electrostatic sensitive device.
Applications
For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA.
Features
D Low supply voltage D Low current consumption D 50 W input impedance at 945 MHz D Low noise figure D High power gain
2
1
2
1
94 9279
13 579
13 653
13 566
3
4
3
4
S822T Marking: 822 Plastic case (SOT 143) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
S822TW Marking: W22 Plastic case (SOT 343) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
1
2
13 654
13 566
4
3
S822TRW Marking: WSF Plastic case (SOT 343R) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
Document Number 85050 Rev. 3, 20-Jan-99
www.vishay.de FaxBack +1-408-970-5600 1 (8)
S822T/S822TW/S822TRW
Vishay Telefunken Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 12 6 2 8 30 150 –65 to +150 Unit V V V mA mW °C °C
Tamb ≤ 125 °C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 450 Unit K/W
Electrical DC Characteristics
Tamb = 25_C, unless otherwis...