S8050LT1
PLASTIC-ENCAPSULATE TRANSISTORS
TRANSISTOR（ NPN ） SOT—23
S8050LT1
FEATURES
Power dissipation 0.3 PCM : Colle...
S8050LT1
PLASTIC-ENCAPSULATE
TRANSISTORS
TRANSISTOR（
NPN ） SOT—23
S8050LT1
FEATURES
Power dissipation 0.3 PCM : Collector current 0.5 ICM : Collector-base voltage V(BR)CBO : 40
W （Tamb=25℃）
1. BASE
A V
2. EMITTER
3. COLLECTOR
ELECTRICAL
CHARACTERISTICS（Tamb=25℃
Symbol voltage voltage V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE(1)
unless otherwise specified）
Test conditions IE=0 MIN 40 25 5 0.1 0.1 0.1 120 50 0.6 1.2 1.4 V V 350 TYP MAX UNIT V V V
Parameter Collector-base breakdown
Ic= 100μA，
Collector-emitter breakdown Emitter-base breakdown current current current
Ic= 0.1mA， IB=0 IE=100μA， IC=0 VCB=40 V , IE=0
voltage
Collector cut-off Collector cut-off Emitter cut-off
μA μA μA
VCB=20V , IE=0 VEB= 5V , VCE=1V, VCE=1V, IC=0 IC= 50mA IC= 500mA
DC
current
gain(note) HFE(2)
Collector-emitter saturation Base-emitter saturation Base-emitter voltage
voltage
VCE(sat) VCE(sat) VBE
IC=500 mA, IB= 50mA IC=500 mA, IB= 50mA IE= 100mA VCE=6V, IC= 20mA 150
voltage
Transition
frequency
fT f=30MHz
MHz
CLASSIFICATION OF HFE(1) Rank Range
L 100-200
H 200-350
DEVICE MARKING : S8050LT1=J3Y
Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail:
[email protected]
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