P4C1682

P4C1681, P4C1682 P4C1681, P4C1682 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 12/15/20/25 ns (Commercial) – 20/25/35ns (P4C1682 Military) Low Power Operation (Commercial) – 715 mW Active – 12, 15 – 550 mW Active – 20/25/35 – 193 mW Standby (TTL Input) – 83 mW Standby (CMOS Input) Single 5V ± 10%Power Supply Separate Inputs and Outputs – P4C1681 Input Data at Outputs during Write – P4C1682 Outputs in High Z during Write Fully TTL Compatible Inputs and Outputs Standard Pinout (JEDEC Approved) – 24-Pin 300 mil DIP – 24-Pin 300 mil SOIC – 24-Pin 300 mil SOJ – 24-Pin CERDIP – 28-Pin LCC (450 mil x 450 mil) DESCRIPTION The P4C1681 and P4C1682 are 16,384-bit (4K x 4) ultra high speed static RAMs similar to the P4C168, but with separate data I/O pins. The P4C1681 features a transparent write operation; the outputs of the P4C1682 are in high impedance during the write cycle. All devices have low power standby modes. The RAMs operate from a single 5V ± 10% tolerance power supply. Access times as fast as 12 nanoseconds are available, permitting greatly enhanced system operating speeds. CMOS is used to reduce power consumption to a low 715 mW active, 193 mW standby. For the P4C1682 and P4C1681, power is only 83 mW standby with CMOS input . levels. The P4C1681 and P4C1682 are available in 24-pin 300 mil DIP and SOIC packages providing excellent board level densities. The P4C1682 is also available in a 28-pin LCC packag...