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P4C1024 Dataheets PDF



Part Number P4C1024
Manufacturers ETC
Logo ETC
Description HIGH SPEED 128K X 8 CMOS STATIC RAM
Datasheet P4C1024 DatasheetP4C1024 Datasheet (PDF)

P4C1024 P4C1024 HIGH SPEED 128K x 8 CMOS STATIC RAM FEATURES High Speed (Equal Access and Cycle Times) — 15/17/20/25/35 ns (Commercial) — 20/25/35/45 ns (Industrial) Single 5 Volts ±10% Power Supply Easy Memory Expansion Using CE1, CE2 and OE Inputs Common Data I/O Three-State Outputs Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast tOE Automatic Power Down Packages —32-Pin 300 mil DIP and SOJ —32-Pin 400 mil SOJ DESCRIPTION The P4C1024 is a 1,048,576-bit high-speed CMOS s.

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P4C1024 P4C1024 HIGH SPEED 128K x 8 CMOS STATIC RAM FEATURES High Speed (Equal Access and Cycle Times) — 15/17/20/25/35 ns (Commercial) — 20/25/35/45 ns (Industrial) Single 5 Volts ±10% Power Supply Easy Memory Expansion Using CE1, CE2 and OE Inputs Common Data I/O Three-State Outputs Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast tOE Automatic Power Down Packages —32-Pin 300 mil DIP and SOJ —32-Pin 400 mil SOJ DESCRIPTION The P4C1024 is a 1,048,576-bit high-speed CMOS static RAM organized as 128Kx8. The CMOS memory requires no clocks or refreshing, and has equal access and cycle times. Inputs are fully TTL-compatible. The RAM operates from a single 5V±10% tolerance power supply. The P4C1024 device provides asynchronous operations with matching access and cycle times. Memory locations are specified on address pins A0 to A16. Reading is accomplished by device selection (CE1 low and CE2 high) and output enabling (OE) while write enable (WE) remains HIGH. By presenting the address under these conditions, the data in the addressed memory Access times of 15 nanoseconds permit greatly en- location is presented on the data input/output pins. The hanced system operating speeds. CMOS is utilized to input/output pins stay in the HIGH Z state when either reduce power consumption to a low level. The P4C1024 CE1 or OE is HIGH or WE or CE2 is LOW. is a member of a family of PACE RAM™ products offering fast access times. Package options for the P4C1024 include 32-pin 300 mil DIP and SOJ packages as well as 400 mil SOJ. FUNCTIONAL BLOCK DIAGRAM ROW SELECT A ••• PIN CONFIGURATION NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 CE2 WE A13 A8 A9 A11 OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3 1024.2 (9) A 262,144BIT MEMORY ARRAY A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 I/O1 ••• ••• ••• ••• ••• ••• INPUT DATA CONTROL COLUMN I/O I/O2 COLUMN SELECT WE CE1 CE2 OE CONTROL CIRCUIT A ••• ••• GND A 1024.1 (8) DIP (P300), SOJ (J300, J400) TOP VIEW Means Quality, Service and Speed 1Q97 141 P4C1024 RECOMMENDED OPERATING TEMPERATURE & SUPPLY VOLTAGE Temperature Range (Ambient) Commercial (0°C to 70°C) Industrial (-40°C to 85°C) Supply Voltage 4.5V ≤ VCC ≤ 5.5V 4.5 ≤ VCC ≤ 5.5V MAXIMUM RATINGS Stresses greater than those listed can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this data sheet. Exposure to Maximum Ratings for extended periods can adversely affect device reliability. Symbol VCC VTERM TA STG IOUT ILAT Parameter Supply Voltage with Respect to GND Terminal Voltage with Respect to GND (up to 7.0V) Operating Ambient Temperature Storage Temperature Output Current into Low Outputs Latch-up Current >200 Min -0.5 -0.5 -55 -65 Max 7.0 VCC + 0.5 125 150 25 Unit V V °C °C mA mA DC ELECTRICAL CHARACTERISTICS (Over Recommended Operating Temperature & Supply Voltage) Symbol VOH VOL VIH VIL ILI ILO IOS Parameter Output High Voltage (I/O0 - I/O7) Output Low Voltage (I/O0 - I/O7) Input High Voltage Input Low Voltage Input Leakage Current Output Leakage Current Output Short-Circuit Current VCC Current CMOS Standby Current (CMOS Input Levels) GND ≤ VIN ≤ VCC GND ≤ VOUT ≤ VCC CE1 ≥ VIH or CE2 ≤ VIL Ind'l. Com'l. Ind'l. Com'l. Test Conditions IOH = –4mA, VCC = 4.5V IOL = 8 mA IOL = 10 mA 2.2 -0.5 -10 -5 -10 -5 Min 2.4 0.4 0.5 VCC + 0.3 0.8 +10 +5 +10 +5 -350 Max Unit V V V V V µA µA mA VOUT = GND, VCC = Max (Single output) not to exceed 30 second duration VCC = 5.5V, IOUT = 0 mA CE1 ≥ VCC -0.2V, CE2 ≤ 0.2V ISB1 20 (Standard) mA 142 P4C1024 CAPACITANCES (VCC = 5.0V, TA = 25°C, f = 1.0 MHz) Symbol CIN COUT Parameter Input Capacitance Output Capacitance Test Conditions VIN = 0V VOUT = 0V Max 8 10 Unit pF pF POWER DISSIPATION CHARACTERISTICS VS. SPEED Symbol ICC Parameter Dynamic Operating Current Temperature Range Commercial Industrial -15 190 N/A -17 180 N/A -20 160 175 -25 150 165 -35 145 160 -45 N/A 155 Unit mA mA *Tested with outputs open and all address and data inputs changing at the maximum write-cycle rate. The device is continuously enabled for writing, i.e., CE2 ≥ VIH (min), CE1, and WE ≤ VIL (max). Switching inputs are 0V and 3V. AC ELECTRICAL CHARACTERISTICS - READ CYCLE (Over Recommended Operating Temperature & Supply Voltage) Symbol tRC tAA tAC tOH tLZ tHZ tOE tOLZ tOHZ tPU tPD Parameter Read Cycle Time Address Access Time Chip Enable Access Time Output Hold from Address Change Chip Enable to Output in Low Z Chip Disable to Output in High Z Output Enable Low to Data Valid Output Enable Low to Low Z Output Enable High to High Z Chip Enable to Power Up Time Chip Disable to Power Down Time 0 12 0 6 0 15 -35 -45 -15 -17 -20 -25 Min Max Min Max Min Max Min Max Min Max Min Max 15 15 15 3 3 8 6 0 7 0 20 3 3 9 7 0 9 0 20 17 17 17 3 3 9 9 0 11 0 20 20 20 20 3 3 11 .


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