P2N2222A
Amplifier Transistors
NPN Silicon
Features
• These are Pb−Free Devices*
MAXIMUM RATINGS (TA = 25°C unless othe...
P2N2222A
Amplifier
Transistors
NPN Silicon
Features
These are Pb−Free Devices*
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Value
Collector −Emitter Voltage
VCEO
40
Collector −Base Voltage
VCBO
75
Emitter−Base Voltage
VEBO
6.0
Collector Current − Continuous
IC 600
Total Device Dissipation @ TA = 25°C Derate above 25°C
PD 625 5.0
Unit Vdc Vdc Vdc mAdc mW mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD 1.5 W 12 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
−55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200 °C/W
Thermal Resistance, Junction to Case
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Co...
