ON1109

Transmissive Photosensors (Photo Interrupters) ON1109 Photo Interrupter Unit : mm For contactless SW, object detection Outline ON1109 is a photocoupler in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and objects passing between them are detected. Mark for indicating LED side ø1.5 2-C2.0±0.3 28.0±0.35 17.0±0.3 5.0±0.2 A Device center 1.0±0.2 13.0±0.2 4.0 min. 3.0±0.2 A' (12.0) 2 22.4±0.2 2-0.45±0.2 Features Highly precise position detection : 0.7 mm Fast response : tr, tf = 6 µs (typ.) Small output current variation against change in temperature Deep and wide gap between emitting and detecting elements 7.0±0.2 3 2-ø3.2±0.2 2 3 1 4 (Note) ( ) Dimension is reference Absolute Maximum Ratings (Ta = 25˚C) Parameter Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Symbol Ratings VR IF PD*1 IC 3 50 75 20 30 5 100 Unit V mA mW mA V V *1 Output (Photo Collector to emitter voltage VCEO transistor) Emitter to collector voltage VECO Collector power dissipation Temperature Operating ambient temperature Storage temperature PC*2 mW ˚C ˚C Topr –25 to +85 Tstg –30 to +100 Input power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C. *2 Output power derating ratio is 1.34 mW/˚C at Ta ≥ 25˚C. Electrical Characteristics (Ta = 25˚C) Paramete...