OH10010

GaAs Hall Devices OH10010 GaAs Hall Device Magnetic sensor I Features Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) Input resistance: typ. 0.75 kΩ Satisfactory linearity of GaAs hall voltage with respect to the magnetic field Small temperature coefficient of the hall voltage: β ≤ − 0.06%/°C Mini type (4-pin) package with positioning projection. Allowing automatic insertion through the magazine package. 0.65 ± 0.15 4 Unit : mm 2.8 − 0.3 + 0.2 1.5 ± 0.2 1 0.5 R 0.65 ± 0.15 0.4 −0.05 (0.5 R) 0.16 − 0.06 +0.1 0.95 0.95 2.9 ± 0.2 1.9 ± 0.2 3 2 0.5 ± 0.1 1.1 − 0.1 + 0.2 0.8 0 to 0.1 0.4 ± 0.2 0.4 ± 0.2 φ 1.0 ± 0.025 I Applications Various hall motor (VCR, phonograph, VD, CD, and FDD) Automotive equipment Industrial equipment Applicable to wide-varying field (OA equipment, etc.) 1 : VH Output (−) side 2 : VC Input (−) side 3 : VH Output (+) side 4 : VC Input (+) side Mini Type Package (4-pin) with positioning projection I Absolute Maximum Ratings Ta = 25°C Parameter Control voltage Power dissipation Operating ambient temperature Storage temperature Symbol VC PD Topr Tstg Rating 12 150 −30 to +125 −55 to +125 Unit V mW °C °C Marking Symbol: ON I Electrical Characteristics Ta = 25°C Parameter Hall voltage*1 Unequilibrium ratio*2, 4 Symbol VH VHO RIN ROUT β α γ Conditions VC = 6 V, B = 0.1 T VC = 6 V, B = 0 T IC = 1 mA, B = 0 T IC = 1 mA, B = 0 T IC = 6 mA, B = 0.1 T IC = 1 mA, B = 0 T IC = 6 mA, B = 0.1 T/0.5 T 0.5 0.75 1.5 5 −0.06 0.3 2 Min 80 T...